Specification规格 |
Detail详情 |
GaN Device 氮化镓器件 |
WT7162RHUG24A SuperGaN SiP |
Topology 拓扑 |
Boundary Mode PFC + Flyback Quasi-Resonant Mode/Valley-Switching Multi-mode Operation 零界模式 PFC + 反激准谐振模式 /谷底开关多模操作 |
Full Load Efficiency 满载效率 |
91.2% @ 90 VAC/Full Load 91.2% @ 90 VAC/满载 |
Overall Peak Efficiency 整机峰值效率 |
92.7% @ 264VAC/Full Load 92.7% @ 264VAC/满载 |
Power Density 功率密度 |
15.8 W/in3 (w/o housing) 15.8 W/in3(无外壳) |
Output Voltage Operation 输出电压协议 |
USB-C PD 3.0, PPS 3.3 V - 21 V |
No Load Power Loss 空载损耗 |
< 50 mW @ 264 VAC < 50 mW(@ 264 VAC) |
Output Voltage and Current 输出电压和输出电流 |
PPS: 3.3 V – 21 V/5 A |
EMI Compliant 电磁兼容 |
Conducted and Radiated 传导和辐射 |
Dimensions 外形尺寸 |
69mm x 63mm x 23.8mm |
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